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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1141 DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS)= 300V(Min) *High DC Current Gain : hFE= 500(Min)@IC= 4A APPLICATIONS *Designed for high voltage switching, igniter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w scs .i w VALUE 400 V 300 V 7 V 6 A 10 A 40 W UNIT .cn mi e IC Collector Current-Continuous ICM Collector Current-Peak Collector Power Dissipation @ TC=25 Junction Temperature PC TJ 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS IC= 3A; L= 10mH, PW= 50s; f= 50Hz IC= 0.1mA; IE= 0 MIN TYP. 2SD1141 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage 300 V V(BR)CBO Collector-Base Breakdown Voltage 400 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 40mA B 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 40mA B 2.0 V ICEO Collector Cutoff Current VCE= 300V; RBE= hFE DC Current Gain Switching times ton Turn-on Time toff Turn-Off Time w w scs .i w IC= 4A; VCE= 2V .cn mi e 500 2.0 23 100 A s IC= 4A, IB1= -IB2= 40mA s isc Websitewww.iscsemi.cn 2 |
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